unisonic technologies co., ltd 2sd1802 npn silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2011 unisonic technologies co., ltd qw-r209-001.ba high current switching application ? description the utc 2sd1802 applies to voltage regulators, relay drivers, lamp drivers and electrical equipment. ? features * adoption of fbet, mbit processes * large current capacity and wide aso * low collector-to-emitter saturation voltage * fast switching speed ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 2SD1802L-X-TM3-T 2sd1802g-x-tm3-t to-251 b c e tube 2sd1802l-x-tn3-t 2sd1802g-x-tn3-t to-252 b c e tube 2sd1802l-x-tn3-r 2sd1802g-x-tn3-r to-252 b c e tape reel note: pin assignment: b: base c: collector e: emitter
2sd1802 npn silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r209-001.ba ? absolute maximum rating ( t a = 25 , unless otherwise specified ) parameter symbol ratings unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 6 v collector power dissipation p c 1 w t c =25 15 collector current (dc) i c 3 a collector current (pulse) i cp 6 a junction temperature t j 150 storage temperature t stg -55 ~ +150 note 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. the device is guaranteed to meet performance specification within 0 ~70 operating temperature range and assured by design from ?20 ~85 . ? electrical characteristics (t a =25 , unless otherwise specified) parameter symbol test conditions min typ max unit collector cutoff current i cbo v cb =40v, i e =0 1 a emitter cutoff current i ebo v eb =4v, i c =0 1 a dc current gain (note) h fe1 v ce =2v, i c =100ma 100 560 h fe2 v ce =2v, i c =3a 35 gain-bandwidth product f t v ce =10v, i c =50ma 150 mhz output capacitance c ob v cb =10v, f=1mhz 25 pf c-e saturation voltage v ce ( sat ) i c = 2a, i b =100ma 0.19 0.5 v b-e saturation voltage v be ( sat ) i c = 2a, i b =100ma 0.94 1.2 v c-b breakdown voltage v ( br ) cbo i c = 10 a, i e =0 60 v c-e breakdown voltage v ( br ) ceo i c = 1ma, r be = 50 v e-b breakdown voltage v ( br ) ebo i e = 10 a, i c =0 6 v turn-on time t on see test circuit 70 ns storage time t stg see test circuit 650 ns fall time t f see test circuit 35 ns ? classification of h fe1 rank r s t u range 100-200 140-280 200-400 280-560
2sd1802 npn silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r209-001.ba ? test circuit (unit : resistance : ? , capacitance : f) input output i b 1 i b2 25v 50 -5v 100 + 470 + v r r b p w =20s duty cycle 1% ic=10i b1 = -10i b2 =1a 25 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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